Arsenide Gallium Wafers, Chips, Photodetectors, and Optical Components with VCSELs
Shareholders in Portfolio Company
Investment Started: 2009
1.1 bln rubles
Co-investment by RUSNANO0.77 bln rubles
Production of vertical-cavity surface-emitting lasers and photodetectors in the
850-nm range: epitaxial wafers, chips, packaged components. Production of ultrahigh-speed (to 40 Gbit/s), energy-efficient optical components for data communications, computer, and consumer markets.
Manufacturing of this product is based on advanced technology for growing semiconductor heterostructures with molecular beam epitaxy, which ensures ultralow internal optical loss in the produced epitaxial wafers.
Vertical cavity surface emitting lasers, photodiodes, and related optical components are used in highspeed data transmission devices for local networks, active optical cables, supercomputers, and devices based on promising standards USB 3.0 and 4.0. This project is well-timed: demand for faster information transmission is growing worldwide.
- Optical components, modules, transceivers, interconnects
- Systems integrators
- Unique experience and know-how in design, epitaxial growth, and processing of VCSELs
- Data transfer rate per channel is four times faster compared with competing modules
- Low power consumption
- High termal stability
09 December 2011
21 September 2011
05 March 2011
23 August 2010
Technologies and Products
Epitaxial heterostructures are prepared using Industrial technology for molecular beam epitaxy on a substrate of gallium arsenide and indium phosphide. Growth takes place under high vacuum conditions. The flow of source material travels in the form of molecules beamed onto the substrate, the target on which deposition of the material occurs. In this fashion, with precise doses of material flowing from each source, it is possible to obtain semiconductor material of varying compositions.
Modern variants in construction of vertical-cavity surface-emitting lasers use vertical optical microresonators with mirrors at the base of interstratified layers of semiconductor materials of differing formulations (for example, solid solutions of aluminum gallium arsenide where the aluminum content varies). As a rule, one, or several, quantum wells is used as the active (light-emitting) area.
Among advantages of VCSEL in comparison with traditional lasers are small angular divergence, symmetrical directional pattern of the output of light emission, temperature and radiation stability, batch-mode processing, and the ability to test instruments directly on the wafer. VIL planar technology facilitates formation of integrated linear arrays and two-dimensional matrices with a large number of individually addressed emitters.
In practice, to achieve high-speed response, it is essential not only to optimize parameters in the active area and epitaxial heterostructures overall but also in the chip pattern of the VCSEL. The technology belonging to Connector Optics makes it possible to realize VCSEL of the spectral range of 850 nm with record-setting high speed-to 40 Gbit/s in a regime of direct current modulation. At present only a few leading companies produce VCSEL providing data transmission of 10 Gbit/s, and they do so largely for their own transmitters. Meanwhile, in accordance with plans for development of the Infiniband standard, the speed of data transmission in next generation cables must reach 26 Gbit/s, while the new interface for USB 3.0 will work at 5 Gbit/s with fiber optic hook-up capability. The protocol for data transmission will make it possible to reach 25 Gbit/s in the near future. Clearly, there is demand in the market for VCSEL that provides data transmission at 25 Gbit/s and greater.