Portfolio Companies

Crocus Technology SA (France) & Crocus Nano Electronics (Russia)

Development and production of Magnetoresistive Random-access Memory (MRAM) in Russia

Operating Factories

Shareholders in Portfolio Company 
RUSNANO, Ventech, IDInvest Partners, NanoDimension, Sofinnova Ventures, CDC Innovation, Industrial Investors Group

Industry Sector 
Nanoelectronics and Photonics

Production Location 
Moscow
Jobs to be created: over 100

Investment Started:  2011

Total Budget

11.8  bln rubles
Co-investment by RUSNANO
4.5  bln rubles

The establishment of magnetoresistive random-access memory production in Russia based on Crocus Technology’s MRAM technology, using 90-65-45 nm process sizes on 300 mm wafers

Crocus Nanoelectronics is a joint venture between ROSNANO and Crocus Technology, founded in 2011. The company implements a full cycle of technological operations at the final stage of production (back end of line, BOL) of integrated memory circuits on 300 mm wafers with 90/55 nm standards.

Crocus Nanoelectronics is a technological leader in the production of magnetoresistive random access memory (MRAM). The company's product portfolio includes RFID and microcontrollers, bioelectronic chips, MRAM memory chips and embedded memory, magnetic sensors for industrial electronics, communication equipment, automotive and consumer electronics.

The first stage of production, consisting in the application of magnetic layers, was launched in 2013. In early 2014, Crocus Nanoelectronics executed the first commercial order for the processing of wafers hosted by Crocus Technology.

Areas of Application

  • Security chips based on MLU for electronic IDs, biometric passports, bank cards, cell phone SIM-cards, and other smart cards
  • High-temperature memory solutions for oil and gas drills, automotive engines, and other industrial equipment exposed to high temperatures
  • Routers for the telecommunications industry
  • Quick search for search engines

Market

  • Manufacturers of smart cards, ID cards and electronic documents
  • Industrial automation manufacturers
  • Producers of telecommunications equipment

Competitive Advantages

  • Non-volatility, high-speed read/write performance, unlimited write cycles

MRAM (magnetoresistive random-access memory) is a new type of memory technology which combines traditional semiconductor and advanced magnetic technologies, resulting in memory chips that offer the benefits of well-established semiconductor memories, such as DRAM, SRAM, and Flash, without their key limitations. In contrast to conventional memory chip technologies, MRAM data is not stored as electric charge or voltage, but instead by magnetic polarization of storage elements. Crocus’ MRAM chips offer the high speed read/write performance, unlimited write cycles, and low voltage operation of DRAM and SRAM, along with the non-volatility and low cost of Flash. TASTM (Thermally Assisted Switching) is a patented Crocus innovation for manufacturing advanced MRAMs, that incorporates unique temperature sensitive magnetic materials and structures for providing scalable and stable high-density memory.