Semiconductor Technologies and Equipment

MBE and Planar Process Equipment Based on SemiTEq Technology

Shareholders in Portfolio Company 
RUSNANO, private co-investors, SemiTEq

Industry Sector 
Coatings and Surface Modification

Production Location 
St. Petersburg

Investment Started:  2010

Total Budget

0.62  bln rubles
Co-investment by RUSNANO
0.14  bln rubles

Production of high-vacuum equipment for molecular beam epitaxy, electron beam evaporation, plasma etching, plasma-enhanced deposition, and rapid thermal annealing. Development of customer-oriented technological processes. Support for RUSNANO infrastructure projects

Molecular beam epitaxy is one of the first revolutionary technologies for managing the structure of a substance at the nanolevel, creating materials with atypical and beneficial characteristics.

Molecular beam epitaxy opens a path to principally new electronics, super-fast computers or, for example, solar batteries with considerable higher performance factors, new optical devices for telecommunications, and other applications.

In 2009 the international award for nanotechnology, RUSNANOPRIZE-2009, in nanoelectronics was given for work in molecular beam epitaxy to Academic Leonid Keldysh (Russia), for theoretical research on the structure and effect of molecular beam epitaxy;  to Professor Alfred  Y. Cho (USA), for research and development of molecular beam epitaxy in deriving nanostructures and their application in nanoelectronics; and to RIBER S.A. (France), for the development of equipment for molecular beam epitaxy.

Areas of application

  • Nanoelectronics
  • Microelectronics
  • Optoelectronics

Competitive advantages

  • Globally competitive equipment
  • Patented technical solutions
  • Well-established system of customer support
  • Twenty years of experience inventing and modernizing thin film deposition

In molecular beam epitaxy technology, layers of various semiconductor and dielectric materials (e.g., silicon, sapphire, gallium arsenide) are applied to the surface of a substrate with layer thickness of up to a single atom. The materials are heated in the effusion chamber of the epitaxy unit. A beam of evaporated molecules is directed onto the substrate where it settles in a thin layer of predetermined structure. The process is repeated so that step by step a multilayer structure is built of alternating materials with different properties, such as different conductivity types or different band gaps. The process of growth is carried out in an ultrahigh vacuum because foreign molecules can distort the structure that is being created. Heterostructures—new materials with unusual properties whose possiblity Academician Leonid Keldysh predicted in the early 1960s—result.

Since molecular beam epitaxy makes it possible to obtain ultrathin layers of only a few atoms thickness, quantum-mechanical effects appear in the materials, changing their optical and electrical properties. Molecular beam epitaxy technology is one of the first technologies for managing the structure of substances at the nanoscale, creating materials with unusual and useful properties. Molecular beam epitaxy opens the way to electronics based on new principles: ultrafast computers, solar cells with significantly higher efficiency, new optical devices for telecommunications, and other applications.

Molecular Beam Epitaxy