RUSNANO Portfolio Company Crocus Nano Electronics Launches First Production Line
Open Innovations, an international forum devoted to emerging technologies and international collaboration, was the backdrop today for launching production of magnetoresistive
Taking part in opening ceremonies by satellite link up were Moscow Mayor Sergei Sobyanin, RUSNANO CEO Anatoly Chubais, Crocus Technology VP for Worldwide Operations
Magnetoresistive random access memory, or MRAM, combines energy independence with rapid writing/reading speed and a virtually unlimited number of rewrite cycles. It is new generation memory. Crocus Nano Electronics will manufacture products based on Crocus Technology"s Magnetic Logic Unit™ (MLU), a disruptive
The manufacturing facility for the company was built at TECHNOPOLIS Moscow in one of the partnership between RUSNANO and the Government of Moscow. The government is developing a new center for innovative
This first production line was completed just one year after construction began. It will produce the world"s first MRAM with
Total investment in the project was more than 200 million euros of which RUSNANO cofinanced 100 million euros.
MRAM (magnetoresistive random access memory) is a digital memory technology that unites the advantages of traditional semiconductor and magnetic technologies DRAM, SRAM, and Flash while avoiding many of their drawbacks. With MRAM, information is written not with electrical charges but with magnetic polarization of memory elements. That change provides a key characteristic for this type of memory—energy independence, the ability to retain what has been written even if power is lost. MRAM chips combine the low energy consumption, high speed, and nearly infinite capacity for
Miniature MRAM chips owe their beginnings to the 1988 discovery of the effect of giant magnetoresistance for which, in 2007, Albert Fert and Peter Grünberg were awarded the Nobel Prize in Physics. In the
Thermally Assisted Switching™ was developed and patented by Crocus Technology for manufacturing advanced MRAMs by heating the memory cells.
RUSNANO Joint-Stock Company was founded in March 2011 through reorganization of state corporation Russian Corporation of Nanotechnologies. JSC RUSNANO contributes to implementation of the state policy on the development of the nanotechnology industry by investing directly and through investment funds of nanotechnology in financially effective high-technology projects providing the development of new production facilities in the Russian Federation. Its primary investment focus is in electronics, optoelectronics and telecommunications, healthcare and biotechnology, metallurgy and metalwork, energy, mechanical engineering and instrument making, construction and industrial materials, chemicals and petrochemicals. 100 percent of RUSNANO’s shares are state owned. Thanks to RUSNANO’s investments, there are currently 138 factories and R&D Centers opened in 37 regions in Russia.
Management of assets of RUSNANO JSC is carried out by Limited Liability Company established in December 2013, RUSNANO Management Company.
Work to establish nanotechnology infrastructure and carry out educational programs is fulfilled by RUSNANO’s Fund for Infrastructure and Educational Programs, which was also established during the reorganization of the Russian Corporation of Nanotechnologies.
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Crocus Nano Electronics LLC (CNE) is a joint venture that was incorporated in 2011 by Crocus Technology, Inc., a MRAM technology developer and RUSNANO, a Russian Federation government investment fund established to help support government policy in the area of nanotechnology developments. CNE is now building the world’s first magnetic memory plant, which will mass-produce advance MLU devices on 300-millimeter plates using the Thermally Assisted Switching™ (TAS) MRAM technology with featured sizes of 90 nm and 65 nm.
For more information, please visit www.crocusnano.com/en