Taking Its Cue from Crocus Nano Electronics, GlobalFoundries Is Going to License Adesto Technologies ReRam Memory from Dialog Semiconductor

28 October 2020

Dialog Semiconductor, a leading provider of storage batteries and power supply management systems, Wi-Fi and Bluetooth Low Energy (BLE) systems, and industrial computing solutions, and GLOBALFOUNDRIES, a world leader in semiconductor manufacturing, declared that they had entered into an agreement whereby Dialog Semiconductor is to grant a license for its conductive bridge random access memory (CBRAM) to GLOBALFOUNDRIES. 

Resistive random access memory (ReRAM) was first developed by Adesto Technologies, which was acquired in 2020 by Dialog Semiconductor. GLOBALFOUNDRIES will offer CBRAM to Dialog Company as an option for non-volatile memory based on its 22FDX platform, and it intends to expand it to other platforms.

The Dialog’s proven CBRAM technology is a low-energy solution designed to support operations for a number of applications ranging from the Internet of Things and 5G communication systems to Artificial Intellect (AI). Low energy consumption, high data reading/recording rate, reduced production costs, and the ability to withstand adverse environmental conditions make CBRAM particularly beneficial for end consumer, medical, and some other industrial and automotive applications. 

“We are satisfied with Adesto Technologies, a long-term partner of our portfolio company Crocus Nano Electronics. A license agreement with a leading semiconductor foundry is one more acknowledgement of how relevant, and in high demand, resistive memory technology is. Three years ago, Crocus Nano Electronics got this memory licensed from Adesto Technologies, and we are confident that productive cooperation between us will continue,” said Andrew Kushnariov, who is Managing Director for Investments at ROSNANO Management Company.

Crocus Nano Electronics was the first company in Russia to start making ReRAM memory chips based on 55 nm ULP (Ultra Low Power) process technology. In-house production was launched in the “Technopolis Moscow” Special Economic Zone. The first product will be a radio-frequency identification chip, which will begin to be released as scheduled, in the year 2021. Domestically manufactured pilot models of chips have a 1-Mbit capacity; however over the short term this indicator could be raised up to 128 Mbit.

Reference

RUSNANO Joint-Stock Company was founded in March 2011 through reorganization of state corporation Russian Corporation of Nanotechnologies. JSC RUSNANO contributes to implementation of the state policy on the development of the nanotechnology industry by investing directly and through investment funds of nanotechnology in financially effective high-technology projects providing the development of new production facilities in the Russian Federation. Its primary investment focus is in electronics, optoelectronics and telecommunications, healthcare and biotechnology, metallurgy and metalwork, energy, mechanical engineering and instrument making, construction and industrial materials, chemicals and petrochemicals. 100 percent of RUSNANO’s shares are state owned. Thanks to RUSNANO’s investments, there are currently 115 factories and R&D Centers opened in 37 regions in Russia.

Management of assets of RUSNANO JSC is carried out by Limited Liability Company established in December 2013, RUSNANO Management Company. Anatoly Chubais is the Chairman of its Executive Board.

Work to establish nanotechnology infrastructure and carry out educational programs is fulfilled by RUSNANO’s Fund for Infrastructure and Educational Programs, which was also established during the reorganization of the Russian Corporation of Nanotechnologies.

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Crocus Nano Electronics LLC (CNE) is a joint venture that was incorporated in 2011 by Crocus Technology, Inc., a MRAM technology developer and RUSNANO, a Russian Federation government investment fund established to help support government policy in the area of nanotechnology developments. CNE is now building the world’s first magnetic memory plant, which will mass-produce advance MLU devices on 300-millimeter plates using the Thermally Assisted Switching™ (TAS) MRAM technology with featured sizes of 90 nm and 65 nm.

For more information, please visit www.crocusnano.com/en